| Lectures and exercises |
hours |
| Topics |
Specific contents |
|
| Elements os quantum mechanics for engineers |
Schroedinger equation; electronic properties of crystals; band structures; density of states; effective mass approximation; Fermi level; |
8
|
| Elements of electron transport for engineers |
The Boltzmann transport equation; Moment's method; hydrodynamic and drift-diffusion models; The Monte Carlo method to solve the transport equations; calculation of terminal currents in nanostructures. |
8
|
| Quantum effects in electron devices |
Quantization and high field transport effects in modern electronic devices. Threshold voltage shift, gate capacitance attenuation, saturation of the drain current. nanowires and nanodots and potential applications in nano-electronics. |
10
|
| Scaling of nano-electronic technologies |
The ITRS. Impact of geometrical scaling on the performance of electronic devices. Ways to overcome scaling limitations exploiting quantum and high field transport effects. Short channel effects and velocity saturation. high field transport. Architecture of modern bipolar and MOS devices for high performance applications. (SOI, Double Gate, FinFETs, Gate all around, heterojunction bipolars). |
10
|
| Models for advanced electron devices |
Balistic and quasi-balistic transport models for electron devices. Consequences of quasi-balistic transport on the performance of electron devices. Concepts of strained silicon technologies. |
7
|
| Reliability of electron devices and interconnects |
Degradation mechanisms of electron devices; tunneling; hot carrer effects; electromigration; latch-up, etc. |
7
|
| Total hours for lectures and exercises |
50 |
| for exercises only |
6 |
|
Further educational activities
|
hours
|
| Labs |
4 |
| Tutorials / Seminars |
2 |
| Workshops |
|
| Guided tours |
|
| |
|
| Total hours for further educational activities |
6 |
| Total hours |
56
|